Experimental proof of the multivalued Sasaki effect in n-Si
- 30 August 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (24) , L645-L649
- https://doi.org/10.1088/0022-3719/13/24/003
Abstract
The existence of transverse electric fields on account of a multivalued redistribution of electrons between valleys situated symmetrically to a heating electric field is investigated for n-Si at liquid neon temperature. The transverse voltage appears when the heating field exceeds a certain value of about 8 kV m-1, at least in a part of the sample, and saturates for higher fields applied. It can be switched by magnetic fields of only some 10-3 T, characteristic for a domain formation in the sample with respect to the transverse field.Keywords
This publication has 2 references indexed in Scilit:
- Ionization of low donor levels and recombination of hot electrons in n‐Si at low temperaturesPhysica Status Solidi (b), 1979
- Static high field domains in n-SiPhysica Status Solidi (a), 1978