Auger recombination in PbTe
- 1 June 1977
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (6) , 2632-2633
- https://doi.org/10.1063/1.323952
Abstract
The carrier lifetime τ in PbTe was determined by measuring the decay time of the photoconductivity. The experimental values of τ are compared with a theory for Auger recombination recently presented by Emtage. It has been shown by this author that Auger recombination in semiconductors with a many-valley band structure such as that of PbTe comes principally from the collision of carriers in different valleys of one band. The qualitative fit of experimental and theoretical data shows that Auger recombination is, in fact, an important recombination mechanism in PbTe. This may have a considerable influence on the effectivity of infrared luminescence devices.This publication has 5 references indexed in Scilit:
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- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954