Structure and properties of a-Si1−xGex:H films prepared by RF-diode sputtering

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1 December 1985

journal article
Published by Elsevier in Journal of Non-Crystalline Solids

Vol. 77-78, 889-892
https://doi.org/10.1016/0022-3093(85)90803-8

Abstract

No abstract available

Keywords

This publication has 6 references indexed in Scilit:

High photoconductivity in dual magnetron sputtered amorphous hydrogenated silicon and germanium alloy films
Applied Physics Letters, 1984
Preparation of photoconductive a-SiGe alloy by glow discharge
Journal of Non-Crystalline Solids, 1983
An XPS study of sputtered a-Si,Ge alloys
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Optical absorption, photoconductivity, and photoluminescence of glow-discharge amorphous ${Si}_{1 - x} {Ge}_{x}$ alloys
Physical Review B, 1982
Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State Density
Physical Review Letters, 1981
Dark conductivity and photoconductivity of hydrogenated amorphous Si1−xGex alloys
Journal of Applied Physics, 1981