Diffusion mediated chemical reaction in Co/Ge/Si(100) forming Ge/CoSi2/Si(100)
- 26 February 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (9) , 1241-1243
- https://doi.org/10.1063/1.115939
Abstract
We report the occurrence of a diffusion mediated chemical reaction in the layered structure Co/Ge/Si(100) to form Ge/CoSi2/Si(100). This is possible due to the lower onset temperature of inward diffusion of Co in Ge(100) (∼150 °C) compared to that in Si(100) (∼300 °C). Deposition of ∼2 monolayer (ML) of Co at room temperature, onto a Ge covered (∼3 ML) Si(100) surface, mainly forms CoxGey species on the surface. However, annealing the sample at 400 °C, Co diffuses through the Ge layer and reacts with Si and forms buried cobalt silicide of the structure Ge/CoSi2/Si(100). X‐ray and ultraviolet photoelectron spectroscopy (XPS and UPS), medium energy ion scattering (MEIS) are employed for the study. The results open up a possibility to fabricate metal/semiconductor heterostructures in a novel way.Keywords
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