Low-noise GaAs m.e.s.f.e.t.s
- 10 June 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (12) , 309-310
- https://doi.org/10.1049/el:19760238
Abstract
GaAs m.e.s.f.e.t.s with optimum noise figures of 1.6 dB at 6 GHz have been fabricated by projection photolithography. An equation has been developed for the calculation of optimum noise figure which gives good agreement between calculated and measured values.Keywords
This publication has 0 references indexed in Scilit: