Migration of Si in δ-doped GaAs
- 1 June 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (6) , 612-615
- https://doi.org/10.1088/0268-1242/3/6/019
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Quantifying the effects of uneven etching during the SIMS analysis of periodic doping structures grown by silicon MBESurface and Interface Analysis, 1988
- Selectively δ-doped AlxGa1−xAs/GaAs heterostructures with high two-dimensional electron-gas concentrations n2DEG≥1.5×1012 cm−2 for field-effect transistorsApplied Physics Letters, 1987
- Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300KSolid State Communications, 1987
- Si incorporation probabilities and depth distributions in Ga1−xAlxAs films grown by molecular-beam epitaxyJournal of Applied Physics, 1986
- Controlled growth of GaAs layers for monolithic hot electron transistorsJournal of Vacuum Science & Technology B, 1986
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Beam-induced broadening effects in sputter depth profilingVacuum, 1984
- Kinetic limitations to surface segregation during MBE growth of III?V compounds: Sn in GaAsApplied Physics A, 1984
- Quantitative measurement of impurities in GaAs layers by secondary ion mass spectrometrySurface and Interface Analysis, 1980
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980