Cryogenic temperature performance of modulation-doped field-effect transistors

8 June 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (12) , 777-779
https://doi.org/10.1049/el:19890525

Abstract

We report S-parameter measurements of AlInAs/GalnAs/ InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80 K is 3dB higher than at 300 K, and the current gain cutoff frequency fT increases from 32 GHz at 300 K, to 42 GHz at 80 K, which is the first observation of higher fT by direct measurement.

Keywords

80 K
300 K
32 GHZ
MODULATION-DOPED FIELD-EFFECT TRANSISTORS
CURRENT GAIN
S-PARAMETER MEASUREMENTS
42 GHZ
ALINAS-GAINAS-INP
CRYOGENIC TEMPERATURES
CUTOFF FREQUENCY

This publication has 1 reference indexed in Scilit:

High Frequency Properties Of InA1As/InGaAs High Electron Mobility Transistors At 77 K
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005