Localization of exciton states in structurally disordered materials

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Abstract
A comparative study of the influence of the structural disorder on the localization properties of exciton wave functions is presented. The localization behavior of exciton states is analyzed by means of the inverse participation ratio (IPR) and of related quantities. We have performed numerical, configurationally averaged calculations using short-ranged (exchange, octupolar) and long-ranged (dipolar) types of interactions and also including the diagonal disorder. We provide the density of states and the energy distribution of the IPR considering various trap concentrations and interactions which are typical for aromatic crystals like naphthalene.