Epitaxial structures with alternate-atomic-layer composition modulation

15 September 1976

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 29 (6) , 323-325
https://doi.org/10.1063/1.89082

Abstract

Epitaxial structures grown by alternate monolayer depositions of GaAs and AlAs are reported. As many as 10⁴ alternate (100) layers of GaAs and AlAs as thin as 1.0±0.1 and 1.0±0.1 monolayers, respectively, were deposited by sequential molecular beam epitaxial growth on a (100)GaAs substrate. Transmission electron microscopy showed the resultant films to be perfectly epitaxial with layered composition modulation of the expected periodicity. Their electronic properties were studied by optical absorption and luminescence.

Keywords

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