The Effect of Magnetic Field on the Low-Temperature Breakdown in Highly Compensated Germanium
- 1 May 1963
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 18 (5) , 660-666
- https://doi.org/10.1143/jpsj.18.660
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Ion Cyclotron Resonance in a Slightly Ionized GasJournal of the Physics Society Japan, 1962
- The Change of Current-Voltage Characteristics by Light Illumination on the Compensated Ge and Si, at Low TemperatureJournal of the Physics Society Japan, 1962
- Low-Temperature Electrical Breakdown in GermaniumJournal of the Physics Society Japan, 1961
- Compound cryosars for low-temperature computer memoriesSolid-State Electronics, 1961
- The Cryosar-A New Low-Temperature Computer ComponentProceedings of the IRE, 1959
- Effect of Minority Impurities on Impurity Conduction in-Type GermaniumPhysical Review B, 1959
- Neutron-diffraction study of the magnetic properties of perovskite-like compounds LaBO3Journal of Physics and Chemistry of Solids, 1957
- Impact ionization of impurities in germaniumJournal of Physics and Chemistry of Solids, 1957
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Electrical Properties of-Type GermaniumPhysical Review B, 1954