Sapphire Substrate Misorientation and SOS/MOS Transistor Performance
- 1 July 1977
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 124 (7) , 1080-1086
- https://doi.org/10.1149/1.2133487
Abstract
Experimental data are presented which show that the crystalline perfection of silicon‐on‐sapphire epitaxial films as measured by x‐ray diffractometry is dependent on both the magnitude and direction of misorientation of the {11̅02} sapphire substrate. Data obtained from SOS/MOS transistors indicate that devices fabricated in highly imperfect films have lower FET mobilities and exhibit leakage current asymmetry.Keywords
This publication has 0 references indexed in Scilit: