Activation ratio of Fe in Fe-doped semi-insulating InP epitaxial layers grown by liquid phase epitaxy and metalorganic chemical vapor deposition
- 18 May 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (20) , 1432-1434
- https://doi.org/10.1063/1.97845
Abstract
The activation ratio of Fe atoms introduced in semi‐insulating (SI) InP layers grown by liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD) has been investigated, employing the current‐voltage characteristics of n+‐SI‐n+ InP diodes and secondary ion mass spectroscopy analysis. The result indicates that most Fe atoms in LPE‐grown SI layers are electrically active as deep acceptors; however, a large amount of unactivated Fe atoms are present in MOCVD‐grown SI layers. This difference between the two kinds of Fe‐doped SI layers can be attributed to the difference in the growth mechanisms of LPE and MOCVD.Keywords
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