Depth correlated lateral variations of layer thicknesses in GaAs-AlGaAs multiple quantum wells investigated by cathodoluminescence
- 1 May 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (18) , 2349-2351
- https://doi.org/10.1063/1.113979
Abstract
Lateral variations of the exciton confinement energy Ecx have been investigated in a GaAs-AlGaAs multiple quantum well (MQW) structure using cathodoluminescence (CL) imaging in a scanning electron microscope. The MQW structure was grown by molecular beam epitaxy on a 2° misoriented GaAs substrate. The CL image of a defined MQW region does not change its lateral intensity distribution after removing different numbers of quantum wells by etching, indicating a correlated variation of Ecx between different quantum wells on a length scale of several μm. The variation of Ecx is connected to a mound like surface topography.Keywords
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