Polarization-independent strained InGaAs/InGaAlAs quantum-well phase modulators
- 1 October 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (10) , 1120-1123
- https://doi.org/10.1109/68.163752
Abstract
Polarization-independent phase modulation in In/sub 1-x/Ga/sub x/As/InGaAlAs multiple-quantum-well waveguides is demonstrated for the first time. It is shown that by increasing the Ga fraction and hence the tensile strain in the quantum well the electric-field-induced refractive index change in the TM polarization Delta n/sub TM/ can be made to approach that in the TE polarization Delta n/sub TE/. At 1.523 mu m, the ratio Delta n/sub TM// Delta n/sub TE/=1 for x=0.7 with a phase shift coefficient of 17.4 degrees /V-mm was achieved. Polarization independence was maintained over the entire range of reverse bias voltage.Keywords
This publication has 4 references indexed in Scilit:
- Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structureIEEE Photonics Technology Letters, 1991
- Compact low-voltage InGaAs/InAlAs multiple quantum well waveguide interferometersElectronics Letters, 1990
- Highly efficient InGaAs/InAIAs MQW waveguide phase shifterElectronics Letters, 1987
- InGaAs/InP multiple quantum well waveguide phase modulatorApplied Physics Letters, 1987