Double quantum wire GaAs/AlGaAs diode lasers grown by organometallic chemical vapor deposition on grooved substrates
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (5) , 305-306
- https://doi.org/10.1109/68.54687
Abstract
Structure and lasing characteristics of double-quantum-wire lasers are reported. Threshold current as low as 2.4 mA and continuous wave operation at room temperature were achieved for lasers with uncoated facets. Subbands due to lateral quantum confinement were observed in the laser spectra. Good agreement between measured dependence of threshold current on cavity length and a simple model accounting for gain saturation was found.<>Keywords
This publication has 7 references indexed in Scilit:
- Single quantum wire semiconductor lasersApplied Physics Letters, 1989
- Stimulated emission in semiconductor quantum wire heterostructuresPhysical Review Letters, 1989
- Scaling laws and minimum threshold currents for quantum-confined semiconductor lasersApplied Physics Letters, 1988
- Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasersIEEE Journal of Quantum Electronics, 1988
- Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasersJournal of Crystal Growth, 1988
- Quantum well lasers--Gain, spectra, dynamicsIEEE Journal of Quantum Electronics, 1986
- Theoretical Gain of Quantum-Well Wire LasersJapanese Journal of Applied Physics, 1985