Energy losses of hot electrons in a thin layer of SiO2 on Si
- 1 October 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (7) , 334-335
- https://doi.org/10.1063/1.1654401
Abstract
In vacuo photoemission from SiO2‐covered Si shows that the quantum yield and the energy threshold depend on the SiO2 layer in the 10‐ to 120‐Å thickness range. These effects have been explained by electron‐optical phonon scattering in the thin SiO2 layer before one Si‐emitted electron escapes into the vacuum. An approximate value of the phonon energy at the center of the Brillouin zone (ΔE = 83 meV) and a mean free path for phonon scattering (l = 35 Å) are given.Keywords
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