The Ultrastructure and Analytical Microscopy of Silicon Deposits in the Roots of Saccharum officinarum (L.)

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Abstract
Silicon accumulation in the endodermis of the ‘set’ and ‘shoot’ roots of Saccharum officinarum (L.) were investigated by scanning electron microscopy and electron-probe microanalysis. Silicon microassay was also carried out by means of the Corinth analytical microscope (CORA). Aggregates are largely associated with the inner tangential wall (ITW) of the endodermis and their formation is basically similar to those seen in Sorghum bicolor (L.) Moench. In contrast to Sorghum the earliest deposits in Saccharum appear in wall strata well within the cell wall cytoplasm interface. An additional layer of silicon was also located along the endodermal pericycle boundary extending some distance along the middle lamella of the radial walls. The results are discussed in relation to those of previous studies of silicon accumulation in endodermal cells and to possible factors affecting such accumulations.