Observation of ghost peaks in GaAs single-heterostructure light-emitting diodes

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Abstract
The spectra of GaAs SH LED’s, which are obtained by LPE growth of Zn‐doped (GaAl)As on Si‐doped n‐type GaAs substrates, are reported. The spectra are shown to be composed of two peaks. The relative peak intensity of the two peaks is found to be dependent on both the temperature and the injection level. The intensity of the low‐energy peak is found to be almost completely eliminated after covering the sides of the diode in order to avoid edge emission. It is concluded that the low‐energy peak is produced by selective absorption of the light traveling in a direction parallel to the junction plane and going out through the edges of the diode. This result is in contradiction with a previous report dealing with the same kind of structure.