The multi-stable behaviour of SOI-NMOS transistors at low temperatures

6 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Abstract

Summary form only given. The operation of NMOS transistors made in laser-recrystallized SOI material has been investigated at both 77 K and 4 K. The back-gate voltage (and its history) turns out to have an important influence on the characteristics. It is found that by applying adequate pulses at the back gates, a variety of stable operating states, which are reflected in a variety of threshold voltages, can be established. This multistable behavior of SOI-NMOS transistors at low temperatures is illustrated for a bistable case at 77 K. By applying different back-gate conditions it is possible to obtain different high-threshold states. Stress measurements confirm the stability of the various states. A very similar behavior is also found for transistors operating at 4 K.<>

Keywords

This publication has 0 references indexed in Scilit: