New transverse-domain formation mechanism in a quarter-micrometre-gate HEMT

13 October 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (21) , 1315-1317
https://doi.org/10.1049/el:19880894

Abstract

We have studied a quarter-micrometre-gate HEMT by a two-dimensional Monte Carlo particle simulation to gain a deeper insight into the device operation. A new transversedomain formation due to intervalley electron transfer is predicted. The effect of domain formation on device performance and current saturation characteristics is also discussed.

Keywords

INTERVALLEY ELECTRON TRANSFER
DEVICE OPERATION
TRANSVERSE-DOMAIN FORMATION MECHANISM
DOMAIN FORMATION
QUARTER-MICROMETRE-GATE HEMT
DEVICE PERFORMANCE
TWO-DIMENSIONAL MONTE CARLO PARTICLE SIMULATION
CURRENT SATURATION CHARACTERISTICS

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