New detection method of hot-carrier degradation using photon spectrum analysis of weak luminescence on CMOS VLSI
- 1 January 1990
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Evaluation technique of gate oxide reliability with electrical and optical measurementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A study of photon emission from n-channel MOSFET'sIEEE Transactions on Electron Devices, 1987
- Analysis of Product Hot Electron Problems by Gated Emission MicroscopyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Photon Emission from Avalanche Breakdown in SiliconPhysical Review B, 1956