Measurements of InGaAs metal-semiconductor-metal photodetector nonlinearities
- 1 June 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (6) , 812-814
- https://doi.org/10.1109/68.584999
Abstract
Nonlinearity measurements of microwave-bandwidth InGaAs metal-semiconductor-metal photodetectors have been performed. The devices show nonlinear characteristics which are similar to p-i-n structures despite a less-uniform electric field within the absorbing region. The nonlinear response versus applied voltage, nonlinearity growth rate versus current, nonlinearity threshold due to high power, and 1-dB compression current measurements presented here are all comparable in magnitude to their p-i-n counterparts.Keywords
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