Band-gap narrowing in highly doped n- and p-type GaAs studied by photoluminescence spectroscopy
- 1 November 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (9) , 4381-4386
- https://doi.org/10.1063/1.343958
Abstract
Band-gap narrowing of GaAs as a function of doping concentration has been measured using photoluminescence spectroscopy on samples grown by molecular beam epitaxy. Both n- (Si) and p- (Be) doped samples with concentrations varying from 3×1017 to 3×1018 cm−3 have been measured. The experimental results obtained from a line-shape analysis of the spectra taking tailing effects into account are in good agreement with recent theoretical calculations. A simple expression for the band-gap narrowing as a function of concentration for both n-and p-doped GaAs is given.This publication has 18 references indexed in Scilit:
- Band-gap shifts in heavilyp-type doped semiconductors of the zinc-blende and diamond typePhysical Review B, 1986
- Band-gap shifts in heavily dopedn-type GaAsPhysical Review B, 1986
- Photoluminescence in heavily doped GaAs. I. Temperature and hole-concentration dependencePhysical Review B, 1980
- Heavily doped semiconductors and devicesAdvances in Physics, 1978
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975
- Cathodoluminescence of n-Type GaAsJournal of Applied Physics, 1968
- Conduction band density of states in impure GaAsJournal of Physics and Chemistry of Solids, 1968
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- IDENTIFICATION OF LASER TRANSITIONS IN ELECTRON-BEAM-PUMPED GaAsApplied Physics Letters, 1965