Molecular-dynamics study of lattice-defect-nucleated melting in silicon
- 15 August 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (5) , 2831-2840
- https://doi.org/10.1103/physrevb.40.2831
Abstract
The high-temperature behavior of both a high-angle twist grain boundary and a free surface on the (110) plane of silicon are investigated using molecular dynamics and the Stillinger-Weber potential. It is found that, above the thermodynamic melting point, melting is nucleated at the grain boundary or surface and propagates through the system with a velocity that increases with temperature. We conclude that, due to the relatively fast nucleation times, melting in real crystals should be initiated at grain boundaries and surfaces, a conclusion that is entirely in accord with experiment.Keywords
This publication has 51 references indexed in Scilit:
- Superheating of metal crystalsPhysics Letters A, 1986
- Materials science: Melting and the surfaceNature, 1986
- Superheating of small solid-argon bubbles in aluminumPhysical Review Letters, 1985
- Orientational Ordering and Melting of Molecularin an-Si Matrix: NMR StudiesPhysical Review Letters, 1985
- Theory of melting based on lattice instabilityPhase Transitions, 1985
- The physics of meltingJournal of Crystal Growth, 1980
- Crystal defects and meltingNature, 1978
- Size effect on the melting temperature of gold particlesPhysical Review A, 1976
- Kinetics of Melting and Crystallization of Phosphorus PentoxideJournal of Applied Physics, 1963
- MELTING KINETICS OF QUARTZ AND CRISTOBALITEThe Journal of Physical Chemistry, 1961