Ultralow specific on resistance UMOSFET with trench contacts for source and body regions realised by selfaligned process

29 August 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (18) , 1640-1642
https://doi.org/10.1049/el:19911025

Abstract

An ultralow on resistance power UMOSFET having a refined contact structure has been fabricated by a selfaligned process. The most important feature of this UMOSFET is its great increment of channel width per unit area, which leads to a noticeable reduction in the on resistance. A 50V UMOSFET with a specific on resistance of 0.58mΩcm² has been achieved despite employing a relatively thick (520μm) substrate with a resistivity of 8mΩcm.

Keywords

SELFALIGNED PROCESS
POWER UMOSFET
TRENCH CONTACTS
ULTRALOW ON RESISTANCE
50 V
REFINED CONTACT STRUCTURE
U-GROOVE MOSFET

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