A study of space-charge-limited transport in nonstoichiometric (NS) GaAs is presented. The NS-GaAs was grown at 250 °C by molecular beam epitaxy and subsequently annealed at 700 °C so that the room-temperature low-field conductivity is due almost entirely to electrons thermally excited to the conduction band from deep traps. Experimental current–voltage characteristics of an n+ GaAs/NS-GaAs homojunction structure display an unusual current saturation whose onset occurs at an electric field of ∼5 kV/cm. We argue that this behavior is due to a combination of electron velocity saturation and the high concentration of compensated traps in annealed NS-GaAs.