A high power MOSFET with a vertical drain electrode and a meshed gate structure
- 1 August 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 11 (4) , 472-477
- https://doi.org/10.1109/JSSC.1976.1050761
Abstract
A MOSFET with a maximum power of 200 W in a 5/spl times/5 mm/SUP 2/ chip which exhibits 20-A current, 3000-millimho transconductance and 100-V breakdown voltage has been developed. The features of the device structure are a vertical drain electrode which makes it possible to use most of the surface area for the source electrode, and a meshed gate structure which realizes an increase in the channel width per unit area. The p-channel device with an offset gate structure was fabricated from an n on p/SUP +/ epitaxial wafer by using polysilicon gate and ion implantation processes. The device can be operated stably at ambient temperatures up to 180/spl deg/C. While the bipolar transistor is a suitable power device in the low voltage region, the MOSFET looks more promising in the high voltage region than the V-FET and the bipolar transistor.Keywords
This publication has 1 reference indexed in Scilit:
- Si UHF MOS high-power FETIEEE Transactions on Electron Devices, 1974