Heterostructure for UV LEDs Based on Thick AlGaN Layers
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Some Features of a Nucleation Layer Growth Process and its Influence on the GaN Epilayer QualityMaterials Science Forum, 1998