Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility
- 17 June 2005
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 80, 82-85
- https://doi.org/10.1016/j.mee.2005.04.047
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scatteringJournal of Applied Physics, 2001
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982