Electrical and Optical Properties of Intermetallic Compounds. II. Gallium Antimonide
- 1 November 1954
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 96 (3) , 576-577
- https://doi.org/10.1103/physrev.96.576
Abstract
The Hall effect and resistivity of GaSb have been investigated over the temperature range 78° to 750°K. Hole mobilities as high as 400 /volt-sec and a forbidden energy gap of 0.775 ev at absolute zero were found. Optical absorption studies at temperatures between 10° 300°K confirm this value of the band separation.
Keywords
This publication has 4 references indexed in Scilit:
- Electrical and Optical Properties of Intermetallic Compounds. I. Indium AntimonidePhysical Review B, 1954
- Electrical Properties of Titanium Dioxide SemiconductorsPhysical Review B, 1953
- Über neue halbleitende Verbindungen IIZeitschrift für Naturforschung A, 1953
- Über neue halbleitende VerbindungenZeitschrift für Naturforschung A, 1952