Excitonic lasing in semiconductor quantum wires

Preprint

1 December 1999

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9912009

Abstract

Direct experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogenously-broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8 105cm-1.

Keywords

SEMICONDUCTOR QUANTUM
DIRECT EXPERIMENTAL
EXCITONIC LASING
OPTICALLY PUMPED
QUANTUM WIRE
WIRES DIRECT
LUMINESCENCE
LASING
LASER

All Related Versions

Version 1, 1999-12-01, ArXiv
Published version: Physical Review B, 61 (16), R10575.

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