Formation of β-SiC nanocrystals on Si(1 1 1) monocrystal during the HFCVD of diamond
- 1 June 2001
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 177 (4) , 298-302
- https://doi.org/10.1016/s0169-4332(01)00225-2
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Electron microscopy of interfaces in chemical vapour deposition diamond films on siliconDiamond and Related Materials, 2000
- A Nucleation Site and Mechanism Leading to Epitaxial Growth of Diamond FilmsScience, 2000
- Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfacesZeitschrift für Physik B Condensed Matter, 1999
- Diamond Films: Recent DevelopmentsMRS Bulletin, 1998
- CVD diamond nucleation and growth on scratched and virgin Si(100) surfaces investigated by in-situ electron spectroscopySurface Science, 1997
- Characterization of bias-enhanced nucleation of diamond on silicon byinvacuosurface analysis and transmission electron microscopyPhysical Review B, 1992
- I n s i t u characterization of diamond nucleation and growthApplied Physics Letters, 1989
- Growth of Diamond Films by Plasma CVDMRS Proceedings, 1987