Ultrasonic and dip resist development processes for 50 nm device fabrication
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (6) , 2621-2626
- https://doi.org/10.1116/1.589696
Abstract
No abstract availableKeywords
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- 10-nm silicon lines fabricated in (110) siliconMicroelectronic Engineering, 1995
- High-Reliability Lithography Performed by Ultrasonic and Surfactant-Added Developing SystemJapanese Journal of Applied Physics, 1994
- Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resistApplied Physics Letters, 1993