Measurement and analysis of small-signal drain admittance in SOS MOSFETs

21 November 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (24) , 2290-2292
https://doi.org/10.1049/el:19911416

Abstract

Frequency dependence of the saturated drain admittance in SOS MOSFETs is reported. Using a new small-signal model, this behaviour is explained by the variation of the floating substrate voltage, and similar effects are expected in SOI. The admittance is shown to be a strong function of gate and drain biases and device geometry. Frequency dependent thermal effects are also reported.

Keywords

SATURATED DRAIN ADMITTANCE
GATE BIAS
FREQUENCY DEPENDENT THERMAL EFFECTS
FLOATING SUBSTRATE VOLTAGE
SMALL-SIGNAL DRAIN ADMITTANCE
SOS MOSFETS
DEVICE GEOMETRY
SMALL-SIGNAL MODEL
DRAIN BIASES
SI-AL2O3

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