Negative resistance of silicon p-n junctions at 4·2°K
- 30 June 1962
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 5 (3) , 177-178
- https://doi.org/10.1016/0038-1101(62)90009-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- The Cryosistor-A Field-Effect Controlled Impact Ionization SwitchProceedings of the IRE, 1961
- CorrespondenceProceedings of the IRE, 1961
- Hot Electrons and Carrier Multiplication in Silicon at Low TemperaturePhysical Review Letters, 1959
- Impact ionization of impurities in germaniumJournal of Physics and Chemistry of Solids, 1957
- The low temperature electrical conductivity of n-type germaniumJournal of Physics and Chemistry of Solids, 1957