External-cavity-induced nonlinearities in the light versus current characteristic of (Ga,Al)As continuous-wave diode lasers
- 1 August 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 13 (8) , 692-696
- https://doi.org/10.1109/jqe.1977.1069418
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Self-pulsation in the output intensity and spectrum of GaAs-AlGaAs cw diode lasers coupled to a frequency-selective external optical cavityJournal of Applied Physics, 1977
- Self-absorption effects on the radiative lifetime in GaAs-GaAlAs double heterostructuresJournal of Applied Physics, 1977
- Improved light-output linearity in stripe-geometry double-heterostructure (Al,Ga)As lasersApplied Physics Letters, 1976
- Return-beam-induced oscillations in self-coupled semiconductor lasersElectronics Letters, 1976
- Self-coupled optical pickupOptics Communications, 1976
- Intrinsic fluctuations in the output intensity of double-heterostructure junction lasers operating continuously at 300°KApplied Physics Letters, 1974
- cw degradation at 300°K of GaAs double-heterostructure junction lasers. I. Emission spectraJournal of Applied Physics, 1973
- Microwave self-modulation of a diode laser coupled to an external cavityIEEE Journal of Quantum Electronics, 1970