Determination of the degree of epitaxy in high-Tc thin films by raman spectroscopy
- 31 July 1992
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 83 (3) , 199-203
- https://doi.org/10.1016/0038-1098(92)90837-y
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Raman scattering in high‐ Tc, superconductorsAdvanced Materials, 1992
- Interband transitions in YBa2Cu3O7Physica C: Superconductivity and its Applications, 1992
- Effect of oxygen disorder on superconductivity-induced self-energy effects in impurity-free YBa2Cu3O7−δSolid State Communications, 1991
- Y-Ba-Cu-O high temperature superconductor thin film preparation by pulsed laser deposition and RF sputtering: A comparative studyPhysica C: Superconductivity and its Applications, 1991
- Structural characteristics of YBa2Cu3O7−δ films on ZrO2 (100) and silicon with a ZrO2 buffer layerThin Solid Films, 1991
- Intensity anomalies of Raman-active phonons in the superconducting state of YBa2Cu3O7−δSolid State Communications, 1991
- Progress and prospects of superconductor electronicsSuperconductor Science and Technology, 1990
- Preparation of superconducting Y–Ba–Cu–O thin filmsJournal of Vacuum Science & Technology A, 1989
- Raman scattering in YBa2Cu3O7-δ untwinned single crystalsPhysica C: Superconductivity and its Applications, 1988
- Systematic Raman and infrared studies of the superconductor YBa2Cu3O7-x as a function of oxygen concentration (0≦x≦1)Solid State Communications, 1988