Characteristics of a Field-Effect Transistor Fabricated with Electropolymerized Thin Film
- 1 March 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (3A) , L448
- https://doi.org/10.1143/jjap.27.l448
Abstract
The preparation and characteristics of the solid-state field-effect transistor (FET) based on poly(p,p'-biphenol)(PBP) thin film prepared by electropolymerization of p,p'-biphenol are presented. The PBP-based FET displayed excellent drain current (I D)-drain voltage (V D) characteristics for various gate voltages. The I D-V D characteristics were analyzed as in a conventional MOS transistor.Keywords
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