Mechanism of texture development in ion-beam-assisted deposition
- 26 July 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (4) , 584-586
- https://doi.org/10.1063/1.124449
Abstract
We perform a series of atomistic simulations of ion-beam-assisted deposition (IBAD) to identify the mechanism by which ion beams select crystallographic texture. Simulations were devised to distinguish between two previously proposed mechanisms: (1) preferential sputtering of differently oriented grains and (2) preferential damage of differently oriented grains followed by grain-boundary migration. We show that while preferential sputtering is capable of producing texture change, it does so much more slowly than observed in IBAD. Simulations that include only differential damage produce structures which are nearly indistinguishable from those seen in IBAD. These results conclusively demonstrate that texture evolution during ion-beam-assisted deposition is dominated by differential damage and subsequent recrystallization.Keywords
This publication has 9 references indexed in Scilit:
- Texture development mechanisms in ion beam assisted depositionJournal of Applied Physics, 1998
- On the mechanism of crystal growth orientation of ion beam assisted deposited thin filmsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Use of ion beam assisted deposition to modify the microstructure and properties of thin filmsInternational Materials Reviews, 1990
- Summary Abstract: Theory of thin-film orientation by ion bombardment during depositionJournal of Vacuum Science & Technology A, 1987
- Theory of thin-film orientation by ion bombardment during depositionJournal of Applied Physics, 1986
- Control of thin film orientation by glancing angle ion bombardment during growthJournal of Vacuum Science & Technology A, 1986
- Alignment of thin films by glancing angle ion bombardment during depositionApplied Physics Letters, 1985
- Ion-beam-induced texture formation in vacuum-condensed thin metal filmsThin Solid Films, 1982
- Theorie der Streuung schneller geladener Teilchen I. Einzelstreuung am abgeschirmten Coulomb-FeldZeitschrift für Naturforschung A, 1947