Aluminum silicon laser alloying with implications for mass storage
- 1 January 1979
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 50 (1) , 515-520
- https://doi.org/10.1063/1.31709
Abstract
A new binary memory device is described on which information is recorded by locally alloying data sites on the surface of a metal‐coated semiconductor planar diode with a high power density beam. Readout of the emory device is achieved by scanning the metal surface with a focused electron beam. The writing and reading concepts, beam requirements and metal‐semiconductor system parameters are presented. Experimental data are given for an aluminum‐silicon tartet demonstrating laser writing with 150 nanosecond single pulses at various temperatures ranging from above the metal melting point to temperatures approaching the metal‐semiconductor eutectic.Keywords
This publication has 0 references indexed in Scilit: