Growth of high-purity semi-insulating bulk GaAs for integrated-circuit applications

1 February 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (2) , 135-140
https://doi.org/10.1109/t-ed.1981.20299

Abstract

Growth of high-purity bulk semi-insulating GaAs by the Liquid-Encapsulated Czochralski (LEC) method has produced thermally stable, high-resistivity crystals suitable for use in direct ion implantation. Large round substrates have become available for integrated-circuit processing. The implanted wafers have excellent electrical uniformity (±4 percent Vp) and have shown electron mobility as high as 4800cm²/V.s for Se implants with 1.7 × 10¹⁷cm^-3peak doping. Careful control of background doping through in situ synthesis has produced GaAs with Si concentrations as low as 6 × 10¹⁴cm^-3grown from SiO2crucibles. Detailed results of qualification tests for ion implantation in LEC GaAs will be discussed. Feasibility of successful high-speed GaAs large-scale integrated circuits using LEC substrates will be described.

Growth of high-purity semi-insulating bulk GaAs for integrated-circuit applications

Abstract

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