Thin-Film Silicon –Growth Process and Solar Cell Application–
Open Access
- 9 December 2004
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 43 (12) , 7909-7920
- https://doi.org/10.1143/jjap.43.7909
Abstract
Growth processes of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (µc-Si:H) from SiH4 and H2/SiH4-glow discharge plasmas are reviewed. Differences and similarities between µc-Si:H and a-Si:H growth reactions in the plasma and on the film-growing surface are discussed, and the nucleus-formation process followed by the epitaxial-like crystal growth process is explained as being processes unique to µc-Si:H. The governing reaction of dangling-bond-defect density in the resulting a-Si:H and µc-Si:H films is also discussed in order to obtain a clue to improve the optoelectronic properties of these materials to enable device applications, particularly to thin-film silicon-based solar cells. Material issues concerning the realization of low-cost high-efficiency solar cells are described, and finally, recent progress in those issues is presented.Keywords
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