Optical silicon lifetime measurements in heavily doped diffused regions

Publisher Website
Google Scholar
Abstract
Monochromatic visible light at various wavelengths was used to generate photocurrent in a silicon n+-p diffused diode. A numerical model which includes electric field, heavy doping band gap reduction and doping level mobility dependence was used with fitting techniques to determine the carrier lifetime in the n+-region at each wavelength.

This publication has 0 references indexed in Scilit: