Scanning tunneling microscopy and spectroscopy of the Si(111)5×5 surface

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Abstract
The scanning tunneling microscope is used to study the structural and electronic properties of the 5 x 5 reconstruction on the Si(111) surface. The 5 x 5 structure is formed by annealing 2 x 1 cleaved surfaces. Results are described for temperature-dependent imaging, voltage-dependent imaging, and spectroscopy. The structure of the 5 x 5 surface is found to be consistent with the dimer-adatom-stacking-fault model. From a comparison of neighboring regions of 2 x 1 and 5 x 5 structures, the pi-bonded chain structure for the 2 x 1 surface is also confirmed.

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