Low-Temperature Annealing Studies in Ge

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Abstract
Irradiation at ∼10°K using 1.10 Mev electrons produces very different changes in the electrical properties of n-type Ge as compared to those produced in p-type Ge. In n-type Ge, more carriers are removed per incident electron at 10°K than at 78°K. However about 50% of the removed carriers are recovered in two stages of annealing, at 34°K and 64°K, after low temperature irradiation. Irradiation at 0.315 Mev, after a 1.10 Mev irradiation, also produces recovery of about 50% of the carriers removed by the 1.10 Mev irradiation. In p-type Ge, low temperature irradiation is at least 100 times less effective in removing carriers than is the case in n type. Annealing of an irradiated p-type sample to 130°K produces no measurable change. It is concluded that the stability of close-vacancy-interstitial pairs against recombination is less in p type than in n-type Ge. A qualitative argument as to the origin of this difference in stability is presented.

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