Crystalline Fraction of Microcrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Pulsed Silane Flow

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Abstract
Microcrystalline silicon (?c-Si) films have been prepared at 200?C by radio-frequency (rf: 13.56 MHz) plasma-enhanced chemical vapor deposition using pulsed silane flow. The crystalline fraction, X c(Raman), of ?c-Si films approximately 200 nm thick is quantitatively determined by decomposing Raman spectra into three peaks: crystalline, intermediate (small-grain-size-crystalline), and amorphous. The effects of rf power on X c(Raman) and hydrogen content, C H, have been studied. X c(Raman) increases with increasing rf power and tends to saturate; the maximum value of X c(Raman) is 71%. With increasing rf power C H decreases to a minimum value of 4.5% and then increases. Hydrogen introduction into Si films overlapped with hydrogen elimination is responsible for the increase and saturation of X c(Raman) with rf power.

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