Type conversion of (Hg,Cd)Te induced by the redistribution of residual acceptor impurities

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Abstract
Bulk (Hg,Cd)Te grown by the quench-anneal process has been found to contain residual acceptor impurities which are normally depleted from the n-type surface by an internal gettering mechanism during low temperature postannealing in saturated Hg vapor. When the n-type slices are postannealed for much longer periods, the Te saturated core is annihilated, and the gettered residual acceptor impurities can redistribute into the surface region. If upon homogenization the residual acceptor concentration exceeds the residual donor concentration, the material will convert to p type. A new method for applying neutron activation analysis (NAA) to (Hg,Cd)Te has been used to identify this acceptor impurity as Cu at levels below 1 ppm. An extension of the NAA technique has employed quartz encapsulated silicon samples to demonstrate Cu may come from either the quartz or annealing environment.

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