A Quantum Mechanical Investigation of Positively Charged Defects In SiO2 Thin Film Devices
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Mechanism for anneal-induced interfacial charging in SiO2 thin films on SiApplied Physics Letters, 1996
- Degradation of the thermal oxide of the Si/SiO2/Al system due to vacuum ultraviolet irradiationJournal of Applied Physics, 1995
- Dissociation of H2 at silicon dangling orbitals in a-SiO2: a quantum mechanical treatment of nuclear motionJournal of Non-Crystalline Solids, 1995
- The silicon-silicon dioxide system: Its microstructure and imperfectionsReports on Progress in Physics, 1994
- Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 1993
- HONDO: A General Atomic and Molecular Electronic Structure SystemPublished by Springer Nature ,1990
- Ab initio configuration interaction study of the structure and magnetic properties of radicals and radical ions derived from group 13–15 trihydridesChemical Physics, 1987
- Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structuresJournal of Applied Physics, 1985
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS CapacitorsIEEE Transactions on Nuclear Science, 1977