Influence of the desorption and growth temperatures on the crystalline quality of molecular-beam epitaxy InAlAs layers
- 1 September 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (5) , 2148-2152
- https://doi.org/10.1116/1.586181
Abstract
The influence of molecular-beam epitaxy growth conditions, especially oxide desorption and growth temperature, on the final quality of InAlAs layers grown on (100) InP substrates, has been analyzed by conventional and high-resolution transmission electron microscopy observations. InP thermal cleaning prior growth at 500 °C has been found to produce rough interfaces and extended defects which propagate up to the surface, while thermal cleaning at 530 °C results in abrupt interfaces and improved epilayer structure. The increase of growth temperature up to 530 °C, also improves the crystalline quality of InAlAs.This publication has 0 references indexed in Scilit: