Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3S) , 1522
- https://doi.org/10.1143/jjap.37.1522
Abstract
The cross-sectional potential images of the GaAs/AlAs multiple quantum wells and InAlAs/InGaAs heterostructures have been successfully obtained by Kelvin probe force microscopy (KFM). It was shown that the smaller amplitude of the alternating voltage (V ac) applied to detect the electrostatic force during the KFM measurements gave a better potential profile of the heterostructures. The spatial resolution of the present KFM was investigated by measuring the InAlAs/InGaAs layered structures with various thicknesses. The minimum thickness of the InAlAs layer distinguished by the KFM was 40 nm.Keywords
This publication has 6 references indexed in Scilit:
- Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs DevicesJapanese Journal of Applied Physics, 1997
- Kelvin probe force microscopy for characterization of semiconductor devices and processesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Kelvin probe force microscopy for potential distribution measurement of semiconductor devicesJournal of Applied Physics, 1995
- Two-dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopyJournal of Applied Physics, 1995
- Surface investigations with a Kelvin probe force microscopeUltramicroscopy, 1992
- Kelvin probe force microscopyApplied Physics Letters, 1991